Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride

A method for selective gold diffusion of monolithic silicon devices and/or circuits Patent application

Selective gold diffusion on monolithic silicon chips for switching and nonswitching amplifier devices and circuits and linear and digital logic circuit

Penalized Orthogonal-Components Regression for Large p Small n Data

We propose a penalized orthogonal-components regression (POCRE) for large p small n data. Orthogonal components are sequentially constructed to maximize, upon standardization, their correlation to the response residuals. A new penalization framework, implemented via empirical Bayes thresholding, is presented to effectively identify sparse predictors of each component. POCRE is computationally efficient owing to its sequential construction of leading sparse principal components. In addition, such construction offers other properties such as grouping highly correlated predictors and allowing for collinear or nearly collinear predictors. With multivariate responses, POCRE can construct common components and thus build up latent-variable models for large p small n data.Comment: 12 page

Relative importance of crystal field versus bandwidth to the high pressure spin transition in transition metal monoxides

The crystal field splitting and d bandwidth of the 3d transition metal monoxides MnO, FeO, CoO and NiO are analyzed as a function of pressure within density functional theory. In all four cases the 3d bandwidth is significantly larger than the crystal field splitting over a wide range of compressions. The bandwidth actually increases more as pressure is increased than the crystal field splitting. Therefore the role of increasing bandwidth must be considered in any explanation of a possible spin collapse that these materials may exhibit under pressure.Comment: 7 pages, 4 figure

Computer program for stress, vibration, and buckling characteristics of general shells of revolution

Structures Research Associates (SRA) system of programs is composed of six compatible computer programs for structural analyses of axisymmetric shell structures. Theories and methods upon which these programs are based are presented in documentation. They apply to a common structural model but analyze different modes of structural response